Probability Formulation of Soft Error in Memory Circuit

Norhuzaimin, Julai and Farhana, Mohamad and Rohana, Sapawi and Shamsiah, Suhaili (2023) Probability Formulation of Soft Error in Memory Circuit. Pertanika Journal of Science & Technology, 31 (4). pp. 1921-1936. ISSN 2231-8526

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Abstract

Downscaling threatens the designers invested in integrity and error mitigation against soft errors. This study formulated the probability of soft error changing the logic state of a Differential Logic with an Inverter Latch (DIL). Using Cadence Virtuoso, current pulses were injected into various nodes in stages until a logic flip was instigated. The voltage and temperature parameters were increased to observe the current level changes over time. The critical charge from each stage was obtained, and a method to formulate the probability of each instance was developed. The voltage produced a higher effect of the change to the critical charge of any instance as compared to temperature. The findings revealed that the N-channel metal-oxide semiconductor (NMOS) drain is more vulnerable to temperature and voltage variation than P-channel metal-oxide semiconductor (PMOS).

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