Germanium Oxidation

Siti Kudnie, Sahari (2021) Germanium Oxidation. UNIMAS Publisher, Universiti Malaysia Sarawak, 94300 Kota Samarahan, Sarawak, Malaysia.. ISBN 978-967-2298-46-5

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Abstract

Scaling down of the planar bulk silicon (Si) metal-oxide-semiconductor (MOS) field effect transistors (FETs) has been confronted its fundamental limit associated with performance, on current, power consumption, and short-channel effects which have the trade-off relationship with each other. Therefore, device structures and materials with high carrier mobility are needed for further continues enhancement in device performance. Recently, germanium (Ge) channel has attracted much of the attention for the development of MOSFETs due to the higher carriers’ mobility than Si. However, the precise control of the Ge surface and oxide/Ge interface is the most critical issues for the development of Ge-channel MOSFETs. The quality at the interface between the Ge channel and gate dielectric degrades with increasing native oxide thickness. Understanding the native oxidation is required to provide a good passivation on Ge surfaces. GeO2 can be useful; however, the basic understanding of Ge thermal oxidation is needed. Because of the rapid progress of Germanium fabrication, the first edition of Germanium oxidation clearly needed as a revision. From the native oxidation to the thermal oxidation, the reader is presented with all the series of experiment results. In addition, many broader topics such as overview of Germanium oxidation since 1950s are presented. The chapter’s introduction provides a general discussion of the topics and subsequent section presents the detail of native and thermal oxidation of Germanium. The book is intended as revision for the postgraduates and engineers in oxidation process of Germanium; it assumes that the reader has already acquired an introductory understanding the physics and technology of semiconductor devices.

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