Effects of voltage and temperature on the soft error sensitivity of CMOS memory system

Farhana, Mohamad Abdul Kadir and Norhuzaimin, Julai (2025) Effects of voltage and temperature on the soft error sensitivity of CMOS memory system. AIP Conference Proceeding, 3056 (1). pp. 1-4. ISSN 1551-7616

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Abstract

The sensitivity of systems to soft errors from single event upsets have increased following the trend of downscaling circuitry. This study investigates the effect of parameter variation of voltage and temperature to the critical charge of vulnerable nodes in a 6T SRAM. A current pulse was injected into sensitive nodes of a 6T SRAM to simulate the effects of a single event transient at varying amplitudes to flip the logic state at the node. The parameters of supply voltage and temperature were varied at specified points to observe the effects on the critical charge of the nodes at read and write state. The relationship of the voltage and temperature parameters as well as the degree of fluctuation of the critical charge were then analyzed.

Item Type: Article
Uncontrolled Keywords: voltage and temperature, parameter variation, 6T SRAM to simulate, CMOS memory system.
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Academic Faculties, Institutes and Centres > Faculty of Engineering
Faculties, Institutes, Centres > Faculty of Engineering
Depositing User: Julai
Date Deposited: 30 Oct 2025 02:54
Last Modified: 30 Oct 2025 02:54
URI: http://ir.unimas.my/id/eprint/50117

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