Activation energy of thermal oxidation germanium oxide on germanium substrates

Halim, N.A.A. and Sahari, S.K. and Hamzah, A.A. and Majlis, B.Y. and Marini, Sawawi and Hasanah, L. and Kashif, M. (2018) Activation energy of thermal oxidation germanium oxide on germanium substrates. 2018 IEEE International Conference on Semiconductor Electronics (ICSE), 2018. ISSN ISBN: 978-1-5386-5283-1

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The activation energy of GeO2 was studied by determining the oxide thickness versus temperature from lower to higher oxidation temperature in the range between 450˚C and 600Ԩ. It was found that a linear relationship can be obtained between oxidation time and oxide thickness for the oxidation temperature between 450 and 575Ԩ while for the 600Ԩ ��������, a linear relationship can be obtained for the shorter oxidation time. The rate of oxidation increased until 0.55 and abruptly decreased after increasing oxidation temperature to 600Ԩ which implies that the oxygen intermixing occurs during higher oxidation (600Ԩ) rather that diffusion mechanism that leads to the lower activation energy.

Item Type: Article
Uncontrolled Keywords: activation energy, Ge oxidation, GeO2, GeO desorption, unimas, university, universiti, Borneo, Malaysia, Sarawak, Kuching, Samarahan, ipta, education, research, Universiti Malaysia Sarawak
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Academic Faculties, Institutes and Centres > Faculty of Engineering
Faculties, Institutes, Centres > Faculty of Engineering
Depositing User: Karen Kornalius
Date Deposited: 01 Aug 2019 01:55
Last Modified: 24 Jun 2022 02:49

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