Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))

Siti Kudnie, Binti Sahari and Nik Amni Fathi, Binti Nik Zaini Fathi and Azrul Azlan, Bin Hamzah and Norsuzailina, Binti Mohamed Sutan and Zaidi, Bin Embong and Suhana, Binti Muhamed Sultan and Muhammad, Kashif and Marini, Binti Sawawi and Lilik, Hasanah and Rohana, Binti Sapawi and Kuryati, Binti Kipli and Abdul Rahman, bin Kram and Nazreen, Binti Junaidi (2019) Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 )). Sains Malaysiana, 48 (6). pp. 1195-1199. ISSN 0126-6039

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Abstract

The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2 O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2 O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2 O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2 O3 interface at higher temperature of 600°C.

Item Type: Article
Uncontrolled Keywords: Al2 O3 ; germanium; interfacial layer; post deposition anneal, unimas, university, universiti, Borneo, Malaysia, Sarawak, Kuching, Samarahan, ipta, education, , research, Universiti Malaysia Sarawak.
Subjects: T Technology > TP Chemical technology
Divisions: Academic Faculties, Institutes and Centres > Faculty of Engineering
Depositing User: Gani
Date Deposited: 31 Jul 2019 08:00
Last Modified: 28 May 2021 07:30
URI: http://ir.unimas.my/id/eprint/26219

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