Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience

Sahari, S.K. and Abdul Halim, N.A. and Muhammad, K. and Sawawi, M. and Hamzah, A.A. and Yeop Majlis, B. (2017) Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience. Materials Science and Engineering, 201. ISSN 0921-5093

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Official URL: http://iopscience.iop.org/1757-899X/201/1/012024


The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured by spectroscopic ellipsometry and the chemical bonding structures were characterized by using x-ray photoelectron spectroscopy (XPS). No orientation dependence was observed for the oxidation at temperature of 375°C while for oxidation at 490 and 550°C, Ge oxidation and GeO desorption rate of (100) orientation yield higher rate than (111). The larger atomic space of (100) orientation explains the higher oxidation and desorption rate at Ge surface.

Item Type: Article
Uncontrolled Keywords: Substrate Orientation, Germanium Oxide, thermal oxidation, unimas, university, universiti, Borneo, Malaysia, Sarawak, Kuching, Samarahan, ipta, education, research, Universiti Malaysia Sarawak
Subjects: T Technology > TP Chemical technology
Divisions: Academic Faculties, Institutes and Centres > Faculty of Engineering
Faculties, Institutes, Centres > Faculty of Engineering
Depositing User: Karen Kornalius
Date Deposited: 09 Aug 2017 07:39
Last Modified: 08 Jun 2021 10:48
URI: http://ir.unimas.my/id/eprint/17014

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